FQNL1N50B Fairchild Semiconductor, FQNL1N50B Datasheet - Page 3

• Manufacturer Part Number: FQNL1N50B
• Description: Fqnl1n50b 500v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
200
150
100
10
50
24
20
16
12
-1
-2
8
4
0
0
0
10
10
0.0
Figure 5. Capacitance Characteristics.
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom :
Figure 1. On-Region Characteristics.
Drain Current and Gate Voltage.
0.5
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
V
DS
DS
1.0
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
C
C
C
iss
oss
rss
V
1.5
GS
= 20V
V
GS
= 10V
2.0
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
※ Note : T
10
10
1. 250μ s Pulse Test
2. T
gs
gd
ds
1
1
C
+ C
+ C
= 25℃
※ Note ;
gd
gd
2.5
1. V
2. f = 1 MHz
(C
J
= 25℃
ds
GS
= shorted)
= 0 V
3.0
10
10
10
10
10
10
12
10
-1
-2
8
6
4
2
0
-1
-2
0
0
0.2
2
0
Figure 6. Gate -Charge Characteristics.
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics.
Variation with Source Current
0.4
1
150℃
4
V
V
DS
V
V
25℃
GS
and Temperature.
Q
V
DS
150℃
SD
= 400V
DS
G
, Gate-Source Voltage [V]
= 250V
, Source-Drain voltage [V]
, Total Gate Charge [nC]
= 100V
0.6
2
25℃
6
-55℃
0.8
3
※ Notes :
※ Note :
1. V
2. 250μ s Pulse Test
1. V
2. 250 μ s Pulse Test
※ Notes : I
8
DS
GS
1.0
= 50V
4
= 0V
D
= 1.4 A
Rev. A, March 2001
10
1.2
5