FQNL1N50B Fairchild Semiconductor, FQNL1N50B Datasheet - Page 4

• Manufacturer Part Number: FQNL1N50B
• Description: Fqnl1n50b 500v N-channel Mosfet
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
Figure 9. Maximum Safe Operating Area.
-1
-2
-3
-100
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs Temperature.
J
DS
, Junction Temperature [
10
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
※ Notes :
1
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
1 0
2
1
0
C
J
= 150
= 25
- 4
D = 0 .5
DC
o
0 .0 1
0 .0 5
0 .0 2
DS(on)
C
o
0 .1
C
0 .2
50
1 s
Figure 11. Transient Thermal Response Curve.
100 ms
100
10
1 0
(Continued)
10 ms
2
o
- 3
C]
s i n g l e p u ls e
※ Note :
1 ms
1. V
2. I
t
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
= 0 V
10 s
1 0
- 2
200
10
3
1 0
- 1
0.30
0.25
0.20
0.15
0.10
0.05
0.00
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
※ N o te s :
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
0
P
-50
DM
θ
J M
50
J C
- T
( t) = 8 3 ℃ /W M a x .
vs Case Temperature.
C
T
vs Temperature.
= P
T
J
t
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
2
D M
1
75
* Z
1
θ
/t
2
J C
( t)
50
100
1 0
2
100
o
C]
125
※ Note :
1. V
2. I
150
D
GS
= 0.7 A
= 10 V
Rev. A, March 2001
200
150