DMS2220LFDB Diodes, Inc., DMS2220LFDB Datasheet

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DMS2220LFDB

Manufacturer Part Number
DMS2220LFDB
Description
P-channel Enhancement Mode Mosfet With Integrated Sbr Super Barrier Rectifier
Manufacturer
Diodes, Inc.
Datasheet

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Maximum Ratings – TOTAL DEVICE
Maximum Ratings – P-CHANNEL MOSFET – Q1
Maximum Ratings – SBR
Features
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on rated load
SBR is a registered trademark of Diodes Incorporated.
Notes:
DMS2220LFDB
Document number: DS31546 Rev. 6 - 2
Low On-Resistance
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low V
Low Profile, 0.5mm Max Height
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
1.
2.
3.
4.
95mΩ @V
120mΩ @V
86mΩ (typ) @V
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
GS
GS
= -4.5V
F
= -2.5V
GS
Super Barrier Rectifier (SBR
Characteristic
Characteristic
Characteristic
BOTTOM VIEW
= -1.8V
®
– D1
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
@T
®
)
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
www.diodes.com
Internal Schematic
D
S
3
4
DFN2020B-6
Q1
TOP VIEW
1 of 6
NC
2
5
G
D1
Mechanical Data
Symbol
T
Symbol
Symbol
V
V
J
@T
V
A
K
V
V
R(RMS)
1
6
R
I
, T
I
FSM
RWM
V
P
RRM
GSS
I
DSS
I
DM
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θ JA
O
D
D
R
Case: DFN2020B-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.0065 grams (approximate)
STG
A
= 25°C unless otherwise specified
-55 to +150
Pin Configuration
BOTTOM VIEW
A
K
Value
Value
Value
K
±12
-3.5
1.4
-20
-12
89
35
25
1
3
SUPER BARRIER RECTIFIER
NC
G
D
D
S
DMS2220LFDB
© Diodes Incorporated
Units
°C/W
Unit
Unit
°C
W
V
V
A
A
V
V
A
A
March 2009
®

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DMS2220LFDB Summary of contents

Page 1

... DSS V GSS 25°C unless otherwise specified A Symbol V RRM V RWM R(RMS FSM www.diodes.com DMS2220LFDB ® SUPER BARRIER RECTIFIER BOTTOM VIEW Pin Configuration Value Unit 1.4 W °C/W 89 °C -55 to +150 Value Units -20 V ± ...

Page 2

... F 415 ⎯ ⎯ Q1, P-CHANNEL MOSFET -1. -1. 0 www.diodes.com DMS2220LFDB = 25°C unless otherwise specified Max Unit Test Condition ⎯ 0V -250μ μ -20V ±8V, V ±100 ±800 = ± ...

Page 3

... Fig. 6 On-Resistance Variation with Temperature 1MHz 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 - Fig. 8 Gate Threshold Variation vs. Ambient Temperature www.diodes.com DMS2220LFDB T = 150° 125° 85° 25° -55° DRAIN CURRENT (A) D Fig. 4 Typical Drain-Source On-Resistance vs ...

Page 4

... SBR is a registered trademark of Diodes Incorporated. DMS2220LFDB Document number: DS31546 Rev 1.2 1.4 1 0.9 0.001 0.01 0 PULSE DURATION TIME (s) 1 Fig. 10 Transient Thermal Response www.diodes.com DMS2220LFDB R ( θJA θ 146°C/W θ JA P(pk (t) θ ...

Page 5

... Note 2 100 125 150 175 www.diodes.com DMS2220LFDB T = 150° 125° 85° 25° -55°C A 0.1 0.2 0.3 0.4 0.5 0.6 0 INSTANTANEOUS FORWARD VOLTAGE (V) F Fig. 12 Typical Forward Characteristics f = 1MHz 1 10 ...

Page 6

... All Dimensions in mm Dimensions IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMS2220LFDB Packaging 3000/Tape & Reel 2013 2014 Aug Sep Oct Nov DFN2020B-6 Min Max Typ 0.47 0.53 0.50 0 0.05 0.02 ⎯ ⎯ 0.13 ...

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