DMS2220LFDB Diodes, Inc., DMS2220LFDB Datasheet - Page 3

• Manufacturer Part Number: DMS2220LFDB
• Description: P-channel Enhancement Mode Mosfet With Integrated Sbr Super Barrier Rectifier
• Manufacturer: Diodes, Inc.

SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
Document number: DS31546 Rev. 6 - 2
10,000
1,000
0.14
0.12
0.08
0.06
0.04
0.02
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
10
0
-50 -25
0
0
Fig. 5 On-Resistance Variation with Temperature
V
V
V
GS
GS
GS
= -1.8V
= -2.5V
1
= -4.5V
T , JUNCTION TEMPERATURE (°C)
-V , DRAIN-SOURCE VOLTAGE (V)
vs. Drain Current and Gate Voltage
J
DS
4
Fig. 3 Typical On-Resistance
2
-I , DRAIN CURRENT (A)
Fig. 7 Typical Capacitance
0
D
C
3
25
rss
C
C
iss
8
oss
4
50
V
GS
Q1, P-CHANNEL MOSFET - Continued
I = -2A
D
12
= -2.5V
5
75
V
GS
100
I = -5A
D
6
= -4.5V
f = 1MHz
16
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20
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0.11
0.09
0.07
0.05
0.03
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
0.14
0.12
0.08
0.06
0.04
0.02
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
-50
-50 -25
0
Fig. 6 On-Resistance Variation with Temperature
-25
Fig. 4 Typical Drain-Source On-Resistance
1
T , JUNCTION TEMPERATURE (°C)
T , AMBIENT TEMPERATURE (°C)
A
J
vs. Drain Current and Temperature
T = -55°C
0
A
0
2
-I , DRAIN CURRENT (A)
D
T = 25°C
V
A
25
GS
I = -2A
25
D
3
= -2.5V
T = 85°C
A
50
50
4
T = 125°C
I = -250µA
D
A
V
GS
I = -5A
75
D
75
5
= -4.5V
DMS2220LFDB
100
I = -1mA
100
D
T = 150°C
6
A
© Diodes Incorporated
125 150
125 150
7
March 2009
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