DMS2220LFDB Diodes, Inc., DMS2220LFDB Datasheet - Page 2

• Manufacturer Part Number: DMS2220LFDB
• Description: P-channel Enhancement Mode Mosfet With Integrated Sbr Super Barrier Rectifier
• Manufacturer: Diodes, Inc.

Electrical Characteristics – P-CHANNEL MOSFET – Q1
Electrical Characteristics – SBR
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
SBR is a registered trademark of Diodes Incorporated.
Notes:
DMS2220LFDB
Document number: DS31546 Rev. 6 - 2
10
5. Short duration pulse test used to minimize self-heating effect.
8
6
4
2
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
V
1
DS
GS
Characteristic
Characteristic
V
= -2.0V
GS
V
GS
V
= -2.5V
GS
= -4.5V
= -8.0V
2
V
GS
= -1.0V
3
V
V
GS
®
GS
Q1, P-CHANNEL MOSFET
= -1.5V
– D1
4
= -1.2V
5
@ T
www.diodes.com
Symbol
A
V
Symbol
R
BV
V
(BR)R
= 25ºC unless otherwise specified
V
DS (ON)
I
I
I
|Y
C
2 of 6
V
C
C
GS(th)
R
GSS
DSS
F
SD
oss
DSS
iss
rss
fs
|
Min
35
⎯
⎯
⎯
-0.45
Min
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
8
6
4
2
0
Typ
354
415
40
0.5
⎯
Typ
632
0.7
60
74
86
65
54
⎯
⎯
⎯
⎯
⎯
8
@T
V
A
Max
0.42
0.49
DS
100
±100
±800
= 25°C unless otherwise specified
Max
Fig. 2 Typical Transfer Characteristics
-1.3
120
-1.2
⎯
⎯
95
⎯
⎯
⎯
⎯
⎯
-V
-1
= -5V
GS
T = 125°C
, GATE SOURCE VOLTAGE (V)
A
T = 150°C
Unit
mΩ
μA
nA
Unit
pF
pF
pF
A
V
V
S
V
μA
1
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
I
I
I
V
R
F
F
R
T = -55°C
= 0.5A
= 1.0A
= 1mA
A
= -20V, V
= V
= -5V, I
= -10V, V
= 0V, I
= ±8V, V
= ±12V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 0V, I
= 20V
T = 25°C
GS
A
T = 85°C
A
, I
Test Condition
1.5
D
S
DMS2220LFDB
Test Condition
D
D
= -250μA
= -1.6A
DS
D
D
D
= -2.8A
GS
GS
= -250μA
DS
= -2.8A
= -2.0A
= -1.0A
= 0V
= 0V
= 0V
= 0V
© Diodes Incorporated
March 2009
2