FDFMC2P120 Fairchild Semiconductor, FDFMC2P120 Datasheet - Page 2

• Manufacturer Part Number: FDFMC2P120
• Description: Fdfmc2p120 Integrated P-channel Powertrench Mosfet And Schottky Diode
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
R
t
Q
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
the drain pins. R
FS
GS(th)
SD
DS(on)
iss
oss
rss
G
∆T
∆T
g
gs
gd
rr
θJA
(a). R
(b). R
GS(th)
DSS
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
θJA
= 60°C/W when mounted on a 1in
= 145°C/W when mounted on a minimum pad of 2 oz copper
θJC
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage,
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
are guaranteed by design while R
Parameter
(Note 2)
2
pad of 2 oz copper
(Note 2)
θJA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
dI
D
D
F
T
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
GS
F/
= –3.5 A,
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
A
dt = 100 A/µs
= 25°C unless otherwise noted
= 0 V,
= –16 V,
= ±12 V,
= V
= –4.5 V, I
= –2.5 V, I
= –4.5 V, I
= –2.5 V, V
= –5 V,
= –10 V,
= –10 V,
= –4.5 V, R
= –10 V,
= –4.5 V
= 0 V,
= 0 V,
Test Conditions
G,
I
S
D
= –2 A
I
I
I
V
f = 1.0 MHz
I
I
V
V
D
D
D
D
D
D
D
= –2A,T
GS
DS
DS
GEN
GS
= –250 µA
= –250 µA
= –2 A
= –2 A
= –3.5 A
= –1 A,
= –3.5 A,
= 0 V
= –5 V
= 0 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
–0.6
–20
–10
Typ Max
–1.0
–0.9
–11
101
145
136
280
3.2
0.7
65
35
12
11
13
3
6
7
8
3
1
3
±100
–1.5
–1.2
125
200
180
6.4
–1
16
22
20
–2
4
FDFMC2P120 Rev.E (W)
Units
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
nC
nS
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
A
S
A
V