FDFMC2P120 Fairchild Semiconductor, FDFMC2P120 Datasheet - Page 5

• Manufacturer Part Number: FDFMC2P120
• Description: Fdfmc2p120 Integrated P-channel Powertrench Mosfet And Schottky Diode
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
Figure 9. Schottky Diode Forward Voltage.
0.001
0.01
0.01
5
4
3
2
1
0
0.1
0.1
Figure 7. Gate Charge Characteristics.
10
0.0001
0
1
1
0
I
D
= -3.5A
T
J
D = 0.5
= 125
0.1
0.2
0.1
0.05
0.02
o
C
0.01
1
0.2
V
F
0.001
, FORWARD VOLTAGE (V)
SINGLE PULSE
Q
g
, GATE CHARGE (nC)
0.3
T
J
= 25
V
2
0.4
DS
Figure 11. Transient Thermal Response Curve.
o
= -5V
C
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.5
0.01
-15V
0.6
3
-10V
0.7
0.1
0.8
4
t
1
, TIME (sec)
Figure 10. Schottky Diode Reverse Current .
500
400
300
200
100
0.000001
0
0.00001
0.0001
0
Figure 8. Capacitance Characteristics.
0.001
1
C
0.01
0.1
rss
0
C
oss
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
C
5
V
iss
R
T
, REVERSE VOLTAGE (V)
T
J
T
8
J
= 125
J
= 100
= 25
P(pk)
Duty Cycle, D = t
T
o
o
R
o
C
C
J
C
R
θJA
- T
θJA
10
(t) = r(t) * R
A
t
=145 °C/W
1
12
= P * R
t
2
100
θJA
1
FDFMC2P120 Rev.E (W)
θJA
(t)
/ t
15
16
2
V
f = 1MHz
GS
= 0 V
1000
20
20