FDFMC2P120 Fairchild Semiconductor, FDFMC2P120 Datasheet - Page 4

• Manufacturer Part Number: FDFMC2P120
• Description: Fdfmc2p120 Integrated P-channel Powertrench Mosfet And Schottky Diode
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
10
1
8
6
4
2
0
Figure 3. On-Resistance Variation with
8
6
4
2
0
-50
Figure 1. On-Region Characteristics.
0.5
0
Figure 5. Transfer Characteristics.
V
V
GS
I
D
GS
= -4.5V
= -3.5A
= -4.5V
-25
V
DS
1
= -5V
1
-V
-V
T
0
GS
J
DS
, JUNCTION TEMPERATURE (
Temperature.
-3.5V
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
1.5
25
2
50
-3.0V
2
T
A
= -55
3
75
2.5
o
C
-2.5V
o
125
100
C)
o
C
4
3
-2.0V
125
25
o
C
150
3.5
5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.44
0.36
0.32
0.28
0.24
0.16
0.12
0.08
100
0.1
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.4
0.2
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
10
with Source Current and Temperature.
1
2
1
0.2
0
1
Drain Current and Gate Voltage.
V
GS
V
GS
= 0V
Gate-to-Source Voltage.
= -2.5V
-V
0.4
SD
T
2
-V
A
T
, BODY DIODE FORWARD VOLTAGE (V)
-3.0V
= 25
A
GS
2
= 125
, GATE TO SOURCE VOLTAGE (V)
o
C
-I
D
o
C
, DRAIN CURRENT (A)
0.6
-3.5V
4
25
o
C
3
T
A
-55
= 125
0.8
-4.0V
o
6
C
o
C
FDFMC2P120 Rev.E (W)
4
1
8
-4.5V
I
D
= -1.8A
1.2
10
5