NDB510A Fairchild Semiconductor, NDB510A Datasheet - Page 3

• Manufacturer Part Number: NDB510A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
(Note 2)
t
I
THERMAL CHARACTERISTICS
R
R
Notes:
1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
D(ON)
r
D(OFF)
f
S
SM
rr
rr
SD
g
gs
gd
JC
JA
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note 2)
(T
C
Conditions
V
V
V
I
V
V
dI
D
I
= 25°C unless otherwise noted)
S
DD
GS
DS
GS
GS
S
= 15 A, V
/dt = 100 A/µs
= 7.5 A
= 50 V, I
= 10 V, R
= 80 V,
= 0 V,
= 0 V, I
S
GS
= 15 A,
D
GEN
= 15 A,
= 10V
= 24
T
J
= 125°C
NDP510AE
NDB510AE
NDP510BE
NDB510BE
NDP510AE
NDB510AE
NDP510BE
NDB510BE
NDP510A
NDB510A
NDP510B
NDB510B
NDP510A
NDB510A
NDP510B
NDB510B
Type
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
ALL
Min
22.5
10.5
0.89
0.85
Typ
4.5
6.8
10
63
49
45
98
Max
62.5
100
140
1.3
1.2
20
80
75
30
15
13
60
52
10
2
NDP510.SAM
Units
°C/W
°C/W
nC
nC
nC
nS
nS
nS
nS
ns
A
A
A
A
V
V
A