NDB510A Fairchild Semiconductor, NDB510A Datasheet - Page 5

• Manufacturer Part Number: NDB510A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
GS
1600
1000
500
200
100
1.06
1.04
1.02
0.98
0.96
30
Figure 11. Switching Test Circuit.
Figure 9. Capacitance Characteristics.
0.1
Figure 7. Breakdown Voltage
1
-50
I
D
R
0.2
= 250µA
Variation with Temperature.
-25
GEN
f = 1 MHz
V
GS
V
= 0 V
DS
0
0.5
T
J
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
25
G
1
50
2
D
S
V
75
DD
5
R
100
L
DUT
10
125
C iss
C oss
2 0
C rss
150
V
(continued)
OUT
175
50
Output, V out
Input, V in
0.01
20
15
10
Figure 12. Switching Waveforms.
Figure 10. Gate Charge Characteristics.
Figure 8. Body Diode Forward Voltage
0.1
5
0
15
10
5
1
0
t
0.2
d(on)
10%
I
Variation with Current and
Temperature.
D
V
= 15A
GS
V
= 0V
0.4
SD
t
50%
10
on
10%
, BODY DIODE FORWARD VOLTAGE (V)
Q
t
Pulse Width
90%
r
g
T = 125°C
, GATE CHARGE (nC)
0.6
J
20
t
d(off)
25°C
0.8
50%
V
-55°C
DS
= 20V
90%
30
t
10%
off
90%
1
5 0
NDP510.SAM
t
Inverted
f
8 0
1.2
40