NDB510A Fairchild Semiconductor, NDB510A Datasheet - Page 4

• Manufacturer Part Number: NDB510A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
2 5
2 0
1 5
1 0
5
0
40
30
20
10
2.5
1.5
0.5
2
0
2
1
Figure 3. On-Resistance Variation
Figure 5. Transfer Characteristics.
-50
0
Figure 1. On-Region Characteristics.
V
DS
V
I
-25
with Temperature.
D
= 10V
GS
3
= 7.5A
= 10V
V
GS
0
2
V
T , JUNCTION TEMPERATURE (°C)
DS
, GATE TO SOURCE VOLTAGE (V)
J
4
, DRAIN-SOURCE VOLTAGE (V)
2 5
V
GS
50
= 20V
5
4
T = -55°C
75
J
100
6
1 2
6
1 0
125
2 5
8.0
7
7.0
6.0
125
5.0
150
175
8
8
1.2
1.1
0.9
0.8
0.7
0.6
2.5
1.5
0.5
1
1.6
1.2
0.8
2
1
0
Figure 4. On-Resistance Variation with
-50
Figure 6. Gate Threshold Variation
Figure 2. On-Resistance Variation with
2
0
0
V
GS
-25
Drain Current and Temperature.
with Temperature.
Gate Voltage and Drain Current.
5
= 5V
1 0
0
T , JUNCTION TEMPERATURE (°C)
1 0
J
T = 125°C
J
2 5
1 5
I
I
D
D
, DRAIN CURRENT (A)
6.0
, DRAIN CURRENT (A)
5 0
2 0
25°C
2 0
-55°C
7 5
2 5
7.0
1 0 0
3 0
8.0
3 0
1 2 5
V
I
3 5
V
D
DS
1 0
GS
1 2
= 250µA
= V
2 0
= 10V
1 5 0
4 0
NDP510.SAM
GS
1 7 5
4 5
4 0