SIE820DF Vishay, SIE820DF Datasheet

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SIE820DF

Manufacturer Part Number
SIE820DF
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE820DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIE820DF-T1-E3
Quantity:
70 000
Document Number: 74447
S-70189-Rev. A, 29-Jan-07
Notes:
a. Package limited is 50 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 sec.
d. See Solder Profile (http://www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?73398
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
10
D
1
DS
D
20
Ordering Information: SiE820DF-T1-E3 (Lead (Pb)-free)
(V)
G
G
2
9
Top View
S
3
8
S
0.0035 at V
0.0064 at V
D
r
DS(on)
S
4
7
S
GS
GS
(Ω)
= 4.5 V
= 2.5 V
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
136
100
N-Channel 20-V (D-S) MOSFET
6
D
I
5
D
(A)
Package
a
Limit
7
Bottom View
4
50
50
S
d, e
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
8
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
New Product
3
Q
= 25 °C, unless otherwise noted
43 nC
g
G
9
2
(Typ)
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
GS
DS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Extremely Low Q
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• VRM
• DC/DC Conversion
• Synchronous Rectification
Low Switching Losses
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Power MOSFET
Ratio Helps Prevent Shoot-Through
50
http://www.vishay.com/ppg?74447
136 (Silicon Limit)
G
a
For Related Documents
gd
(Package Limit)
- 50 to 150
N-Channel MOSFET
WFET Technology for
4.3
5.2
3.3
Limit
30
24
± 12
50
50
104
260
20
80
30
45
66
b, c
b, c
b, c
b, c
b, c
a
a
®
Package for
D
S
Vishay Siliconix
SiE820DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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SIE820DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE820DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE820DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient a Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 74447 S-70189-Rev. A, 29-Jan- 1.5 2 100 SiE820DF Vishay Siliconix 125 ° ° ° 1.0 1.4 1.8 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 7200 ...

Page 4

... SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.8 1 250 µA 1.4 D 1.2 1.0 0.8 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.008 0.007 0.006 °C J 0.005 0.004 0.003 0.002 ...

Page 5

... Document Number: 74447 S-70189-Rev. A, 29-Jan-07 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- SiE820DF Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com ...

Page 6

... SiE820DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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