SIE820DF Vishay, SIE820DF Datasheet - Page 4

• Manufacturer Part Number: SIE820DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiE820DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
- 50
Source-Drain Diode Forward Voltage
- 25
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
T
= 150 °C
J
25
- Temperature (°C)
I
50
D
= 250 µA
75
0.01
100
0.1
10
100
0.01
1
*Limited by r
T
J
Safe Operating Area, Junction-to-Ambient
= 25 °C
*V
125
GS
V
150
0.1
Single Pulse
DS(on)
minimum V
DS
T
A
= 25 °C
- Drain-to-Source Voltage (V)
GS
at which r
1
BVDSS
Limited
DS(on)
0.006
0.004
0.008
0.007
0.005
0.003
0.002
10
50
40
30
20
10
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
1 ms
10 ms
100 ms
1 s
10 s
DC
D
= 18 A
0.1
100
1
V
GS
- Gate-to-Source Voltage (V)
1
2
Time (sec)
T
A
S-70189-Rev. A, 29-Jan-07
Document Number: 74447
= 25 °C
10
3
T
A
= 125 °C
100
4
1000
5