SIE820DF Vishay, SIE820DF Datasheet - Page 3

• Manufacturer Part Number: SIE820DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74447
S-70189-Rev. A, 29-Jan-07
0.007
0.008
0.006
0.005
0.004
0.003
0.002
10
80
60
40
20
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
On-Resistance vs. Drain Current
20
V
V
GS
0.5
20
DS
Output Characteristics
Q
V
= 5 thru 2.5 V
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
= 2.5 V
Gate Charge
- Drain Current (A)
40
V
V
DS
GS
1.0
40
= 10 V
= 4.5 V
V
GS
60
= 2 V
V
1.5
DS
60
80
= 16 V
100
2.0
80
7200
6000
4800
3600
2400
1200
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
1.0
0
On-Resistance vs. Junction Temperature
I
C
D
rss
= 18 A
- 25
T
C
T
= 25 °C
C
1.4
= 125 °C
V
V
Transfer Characteristics
GS
5
DS
0
T
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
C
iss
oss
Capacitance
25
1.8
V
GS
10
50
Vishay Siliconix
= 4.5 V
2.2
T
V
75
C
GS
SiE820DF
= - 55 °C
= 2.5 V
100
www.vishay.com
15
2.6
125
150
3.0
20
3