SIE822DF Vishay, SIE822DF Datasheet
SIE822DF
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SIE822DF Summary of contents
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... Top View Top surface is connected to pins and 10 Ordering Information: SiE822DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...
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... SiE822DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient a Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 74451 S-70190-Rev. A, 29-Jan-07 New Product 1.6 2.0 4800 3600 2400 1200 60 80 1.6 1 1.2 1.0 0.8 0 SiE822DF Vishay Siliconix T = 125 ° ° ° 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 ...
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... SiE822DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2.6 2 250 µA D 2.2 2.0 1.8 1.6 1.4 1 Temperature (°C) J Threshold Voltage *Limited by r www.vishay.com 4 New Product 0.008 0.007 0.006 ° ...
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... Document Number: 74451 S-70190-Rev. A, 29-Jan-07 New Product 120 100 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis- SiE822DF Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 150 5 ...
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... SiE822DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...