SIE822DF Vishay, SIE822DF Datasheet - Page 3

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SIE822DF

Manufacturer Part Number
SIE822DF
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIE822DF-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74451
S-70190-Rev. A, 29-Jan-07
0.0025
0.0055
0.0035
0.0045
0.006
0.004
0.003
0.002
0.005
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
I
D
= 20 A
On-Resistance vs. Drain Current
10
0.4
V
20
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
20
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.8
V
V
GS
V
V
DS
GS
GS
= 10 thru 4 V
40
30
= 10 V
= 4.5 V
= 10 V
V
1.2
GS
= 3 V
40
V
DS
60
= 16 V
1.6
50
New Product
2.0
80
60
4800
3600
2400
1200
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
1.5
0
On-Resistance vs. Junction Temperature
C
I
rss
D
- 25
= 18.3 A
2.0
V
Transfer Characteristics
V
GS
5
DS
T
0
J
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
C
T
V
T
oss
C
Capacitance
25
GS
C
2.5
= 125 °C
= 25 °C
= 10 V, 4.5 V
10
50
Vishay Siliconix
3.0
C
75
iss
SiE822DF
100
15
T
www.vishay.com
C
3.5
= - 55 °C
125
4.0
150
20
3

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