SIE822DF Vishay, SIE822DF Datasheet - Page 4

• Manufacturer Part Number: SIE822DF
• Description: N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiE822DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
10
1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
- 50
Source-Drain Diode Forward Voltage
- 25
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
T
J
J
= 150 °C
- Temperature (°C)
25
50
I
D
= 250 µA
*Limited by r
75
0.01
100
0.1
10
0.01
1
100
T
Safe Operating Area, Junction-to-Ambient
*V
J
DS(on)
= 25 °C
GS
125
V
minimum V
DS
0.1
Single Pulse
New Product
T
150
A
- Drain-to-Source Voltage (V)
= 25 C
GS
at which r
1
BVDSS
Limited
DS(on)
0.006
0.004
0.008
0.007
0.005
0.003
0.002
10
is specified
50
40
30
20
10
0
0.01
2
Single Pulse Power, Junction-to-Ambient
1 s
100 ms
10 s
DC
1 ms
10 ms
On-Resistance vs. Gate-to-Source Voltage
100
0.1
V
4
GS
- Gate-to-Source Voltage (V)
1
Time (sec)
6
S-70190-Rev. A, 29-Jan-07
Document Number: 74451
10
T
I
T
D
A
A
8
= 25 °C
= 18.3 A
= 125 °C
100
1000
10