SIE860DF Vishay, SIE860DF Datasheet

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SIE860DF

Manufacturer Part Number
SIE860DF
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SIE860DF-T1-GE3
Manufacturer:
VISHAY
Quantity:
10 326
Document Number: 68786
S-82582-Rev. A, 27-Oct-08
Notes:
a. Package limited at 60 A.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?68796
Top surface is connected to pins 1, 5, 6, and 10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
V
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
10
D
1
D
(V)
Ordering Information: SiE860DF-T1-E3 (Lead (Pb)-free)
G
G
2
9
0.0021 at V
0.0028 at V
S
Top View
3
8
S
D
R
DS(on)
S
4
7
S
http://www.vishay.com/ppg?73257
GS
GS
(Ω)
= 4.5 V
= 10 V
e
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
178
154
N-Channel 30-V (D-S) MOSFET
6
D
5
I
D
(A)
7
Bottom View
Package
4
Limit
S
60
60
a
a
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
8
C
C
C
C
C
3
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
G
9
2
34 nC
g
(Typ.)
New Product
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• VRM, POL
• DC/DC Conversion
• Synchronous Rectification
• Server
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
®
Gen III Power MOSFET
Ratio Helps Prevent Shoot-Through
60
178 (Silicon Limit)
a
http://www.vishay.com/ppg?68786
G
(Package Limit)
- 50 to 150
For Related Documents
N-Channel MOSFET
4.3
5.2
3.3
Limit
38
31
± 20
125
104
60
60
260
30
80
50
66
b, c
b, c
b, c
b, c
b, c
a
a
®
Package for
D
S
Vishay Siliconix
SiE860DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

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SIE860DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE860DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE860DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... New Product 25 °C, unless otherwise noted 2.0 2.5 3.0 6000 5000 4000 3000 2000 1000 60 80 1.8 1.6 1 1.2 1.0 0.8 0 SiE860DF Vishay Siliconix ° ° 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C ...

Page 4

... SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2 250 µA D 1.8 1.6 1.4 1.2 1.0 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 25 °C, unless otherwise noted 0.006 0.005 0.004 0.003 °C J 0.002 ...

Page 5

... S-82582-Rev. A, 27-Oct-08 New Product 25 °C, unless otherwise noted 120 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE860DF Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 5 ...

Page 6

... SiE860DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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