SIE860DF Vishay, SIE860DF Datasheet - Page 4

• Manufacturer Part Number: SIE860DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiE860DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
www.vishay.com
4
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
I
T
D
J
= 250 µA
25
- Temperature (°C)
0.4
T
J
= 150 °C
50
0.6
75
0.01
100
0.1
Limited by R
10
0.01
1
100
T
Safe Operating Area, Junction-to-Ambient
J
0.8
* V
Single Pulse
= 25 °C
T
25 °C, unless otherwise noted
125
GS
A
= 25 °C
> minimum V
DS(on)
V
0.1
New Product
DS
150
1.0
- Drain-to-Source Voltage (V)
*
GS
at which R
BVDSS Limited
1
DS(on)
0.006
0.005
0.004
0.003
0.002
0.001
10
50
40
30
20
10
0
0.01
is specified
0
I
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
D
= 21.7 A
1 ms
1 s
10 s
10 ms
100 ms
DC
0.1
100
2
V
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S-82582-Rev. A, 27-Oct-08
Document Number: 68786
10
6
T
T
J
J
100
= 125 °C
= 25 °C
8
1000
10