SIE860DF Vishay, SIE860DF Datasheet - Page 3

• Manufacturer Part Number: SIE860DF
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS
Document Number: 68786
S-82582-Rev. A, 27-Oct-08
0.0030
0.0026
0.0022
0.0018
0.0014
0.0010
80
60
40
20
0
10
0.0
8
6
4
2
0
0
0
I
D
V
= 20 A
0.5
GS
On-Resistance vs. Drain Current
V
V
V
= 10 thru 4 V
GS
GS
DS
20
Output Characteristics
20
= 4.5 V
= 10 V
Q
- Drain-to-Source Voltage (V)
1.0
g
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
V
DS
= 15 V
1.5
40
40
V
GS
2.0
V
DS
= 3 V
V
= 24 V
60
GS
60
2.5
= 2 V
25 °C, unless otherwise noted
New Product
3.0
80
80
6000
5000
4000
3000
2000
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
rss
I
- 25
D
= 21.7 A
0.5
5
V
V
C
DS
GS
Transfer Characteristics
T
oss
0
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
1.0
10
25
Capacitance
T
C
C
iss
= 125 °C
T
C
1.5
15
50
T
= 25 °C
C
Vishay Siliconix
= - 55 °C
V
GS
75
2.0
20
= 10 V
SiE860DF
100
www.vishay.com
V
GS
2.5
25
= 4.5 V
125
3.0
30
150
3