PH8230 NXP Semiconductors, PH8230 Datasheet - Page 3

• Manufacturer Part Number: PH8230
• Description: Ph8230 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 11118
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P der
T
P
(%)
120
10 3
10 2
mb
(A)
80
40
der
I D
10
0
1
function of mounting base temperature.
= 25 C; I
10 -1
0
=
---------------------- -
P
tot 25 C
P
tot
DM
R DSon = V DS / I D
50
is single pulse.
100%
100
150
T mb ( C)
1
03ah31
200
Rev. 01 — 23 June 2003
N-channel enhancement mode field-effect transistor
Fig 2. Normalized continuous drain current as a
DC
I
120
I der
der
(%)
80
40
0
function of mounting base temperature.
0
=
-------------------
I
D 25 C
10
I
D
60
100%
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
t p = 100 s
120
1 ms
10 ms
100 ms
V DS (V)
T mb ( C)
PH8230
03am21
03am20
10 2
180
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