PH8230 NXP Semiconductors, PH8230 Datasheet - Page 4
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PH8230
Manufacturer Part Number
PH8230
Description
Ph8230 N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
1.PH8230.pdf
(12 pages)
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Quantity
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4. Thermal characteristics
Table 3:
9397 750 11118
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
Z th(j-mb)
(K/W)
10 -1
10 -2
10 -3
10
1
10 -5
thermal resistance from junction to mounting base
Thermal characteristics
0.05
0.02
single pulse
0.2
0.1
= 0.5
4.1 Transient thermal impedance
10 -4
10 -3
Rev. 01 — 23 June 2003
10 -2
Conditions
N-channel enhancement mode field-effect transistor
10 -1
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
1
Min Typ Max Unit
-
t p (s)
PH8230
03am22
-
10
2.5
4 of 12
K/W