PHB45N03T NXP Semiconductors, PHB45N03T Datasheet - Page 4

• Manufacturer Part Number: PHB45N03T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
ID% = 100 I
1000
100
10
I
120
110
100
Fig.2. Normalised continuous drain current.
D
120
110
100
1
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
1
0
& I
0
ID / A
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
DM
= f(V
20
PD% = 100 P
20
D
/I
D 25 ˚C
40
40
DS
); I
transistor
60
60
= f(T
DM
single pulse; parameter t
DC
80
80
Tmb / C
Tmb / C
mb
VDS / V
D
/P
10
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
mb
140
140
mb
= 25 ˚C
)
tp = 10 us
100 us
1 ms
10 ms
160
160
GS
7528-30
180
180
10 V
100
p
4
0.01
80
60
40
20
Fig.5. Typical output characteristics, T
0.1
10
0
Fig.6. Typical on-state resistance, T
1E-07
4
3
2
1
0
1
0
0
ID / A
RDS(ON) / mOhm
Zth j-mb / (K/W)
12
D =
0.05
0.02
0.5
0.2
0.1
Fig.4. Transient thermal impedance.
14
0
Z
R
th j-mb
2
I
DS(ON)
1E-05
D
20
10
= f(V
= f(t); parameter D = t
= f(I
7
DS
4
); parameter V
VGS / V =
D
VDS / V
); parameter V
ID / A
1E-03
40
t / s
VGS / V =
P
D
6
Product specification
t
8
p
T
1E-01
PHB45N03T
60
GS
GS
p
D =
BUK7528-30
/T
8
j
j
7528-30
= 25 ˚C .
7528-30
= 25 ˚C .
t
T
p
t
9
Rev 1.200
10
12
14
1E+01
80
9
8
7
6
5
10