PHB45N03T NXP Semiconductors, PHB45N03T Datasheet - Page 6

• Manufacturer Part Number: PHB45N03T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
10
V
60
40
20
8
6
4
2
0
I
0
GS
F
0
0
VGS / V
IF / A
= f(V
= f(Q
Fig.14. Typical reverse diode current.
SDS
G
); conditions: I
Tj / C = 175
); conditions: V
0.5
5
transistor
VDS / V = 6
VSDS / V
QG / nC
10
D
1
GS
= 40 A; parameter V
25
= 0 V; parameter T
1.5
15
7528-30
7528-30
24
DS
20
j
2
6
VGS
0
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
Fig.17. Switching test circuit.
DSS
40
% = f(T
RGS
0.5 LI
60
RG
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
RD
VDS
120
BV
T.U.T.
VDS
T.U.T.
Product specification
DSS
140
D
PHB45N03T
shunt
= 25 A
R 01
V
DD
160
-
+
-
+
Rev 1.200
-ID/100
180
VDD
VDD