PHB63NQ03LT NXP Semiconductors, PHB63NQ03LT Datasheet - Page 2

• Manufacturer Part Number: PHB63NQ03LT
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09822
Product data
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
DS
DGR
GS
GSM
tot
stg
j
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
peak gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
Limiting values
Conditions
25 C
25 C
t
T
T
T
T
p
mb
mb
mb
mb
mb
mb
Rev. 01 — 14 June 2002
50 s; pulsed; duty cycle = 25 %
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
T
j
j
175 C
175 C; R
Figure 1
GS
GS
PHP/PHB/PHD63NQ03LT
= 10 V;
= 10 V;
p
p
GS
10 s;
10 s
= 20 k
Figure 2
Figure 2
Figure 3
and
3
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
30
30
68.9
48.7
240
111
+175
+175
68.9
48.7
20
25
2 of 14
Unit
V
V
V
V
A
A
A
W
A
A
C
C