PHB63NQ03LT NXP Semiconductors, PHB63NQ03LT Datasheet - Page 6

• Manufacturer Part Number: PHB63NQ03LT
• Description: Trenchmos Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 09822
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
(m )
T
(A)
I D
j
j
= 25 C
30
20
10
= 25 C
80
60
40
20
0
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
T j = 25 C
T j = 25 C
0.4
20
0.8
40
10 V
V GS = 4.5 V
6 V
5.5 V
1.2
60
V GS = 3 V
V DS (V)
5 V
I D (A)
03ai85
03ai86
5 V
5.5V
6 V
10 V
3.5 V
4.5 V
4 V
1.6
80
Rev. 01 — 14 June 2002
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
PHP/PHB/PHD63NQ03LT
T
a
a
j
(A)
1.5
0.5
I D
= 25 C and 175 C; V
=
80
60
40
20
2
1
0
0
function of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
0
DSon 25 C
V DS > I D x R DSon
R
DSon
0
2
T j = 25 C
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
60
I
D
x R
4
DSon
120
V GS (V)
175 C
T j ( C)
03ai87
03af18
180
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