PHB10N40 NXP Semiconductors, PHB10N40 Datasheet - Page 3

• Manufacturer Part Number: PHB10N40
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
April 1997
PowerMOS transistor
ID% = 100 I
I
D
Fig.2. Normalised continuous drain current.
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
0
0
Fig.3. Safe operating area. T
100
Fig.1. Normalised power dissipation.
0.1
10
0
0
DM
PD%
ID%
1
1
ID / A
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
); I
40
40
10
= f(T
DM
single pulse; parameter t
60
60
DC
mb
D
Tmb / C
VDS / V
Tmb / C
/P
100
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
100
= f(T
100
100 us
tp = 10 us
1 ms
10 ms
100 ms
1000
BUK457-400B
mb
mb
= 25 ˚C
120
120
)
GS
140
140
10 V
p
3
0.001
40
30
20
10
0.8
0.6
0.4
0.2
0.01
0
1
0
0.1
0
0
ID, Drain current (Amps)
1
Tj = 25 C
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
Fig.4. Transient thermal impedance.
Fig.5. Typical output characteristics .
Zth j-mb / (K/W)
Fig.6. Typical on-state resistance .
D =
0.05
0.02
Z
0.5
0.2
0.1
R
5
0
th j-mb
5
5 V
I
DS(ON)
D
VDS, Drain-Source voltage (Volts)
= f(V
1E-05
= f(t); parameter D = t
5.5 V
10
ID, Drain current (Amps)
= f(I
10
DS
); parameter V
6 V
D
15
); parameter V
1E-03
15
t / s
6.5 V
P
20
D
20
Product specification
t
p
T
1E-01
25
GS
PHB10N40
VGS = 7 V
Tj = 25 C
D =
GS
BUKx57-mv
VGS = 4.5 V
p
/T
25
PHP10N40
PHP10N40
t
T
30
p
t
5.5 V
6.5 V
Rev 1.000
1E+01
10 V
10 V
6 V
5 V
7 V
30
35