PHB10N40 NXP Semiconductors, PHB10N40 Datasheet - Page 5

• Manufacturer Part Number: PHB10N40
• Description: Powermos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
April 1997
PowerMOS transistor
Fig.15. Normalised drain-source breakdown voltage .
Fig.13. Typical turn-on gate-charge characteristics.
15
10
1000
1.15
1.05
0.95
0.85
5
0
100
1.1
0.9
10
0
1
-100
VGS, Gate-Source voltage (Volts)
Tj = 25 C
ID = 10 A
0
Switching times (ns)
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
VDD = 200 V
VGS = 10 V
RD = 20 Ohms
Tj = 25 C
Normalised Drain-source breakdown voltage
ID = 10 A
td(off)
td(on)
Fig.14. Typical switching times .
tf
tr
V
10
V
-50
GS
(BR)DSS
t
d(on)
= f(Q
Tj, Junction temperature (C)
RG, Gate resistance (Ohms)
50
Qg, Gate charge (nC)
, t
20
/V
r
G
, t
); parameter V
0
(BR)DSS 25 ˚C
d(off)
80 V
, t
30
200 V
f
= f(R
50
100
= f(T
40
G
)
VDD = 320 V
DS
j
)
100
PHP10N40
PHP10N40
50
150
150
60
5
VGS
Fig.17. Normalised unclamped inductive energy.
0
20
15
10
5
0
120
110
100
Fig.16. Source-Drain diode characteristic.
90
80
70
60
50
40
30
20
10
0
Fig.18. Unclamped inductive test circuit.
0
IF, Source-Drain diode current (Amps)
VGS = 0 V
20
EAS, Normalised unclamped inductive energy (%)
E
AS
0.2
RGS
40
VSDS, Source-Drain voltage (Volts)
I
0.5 LI
F
= f(V
0.4
60
E
D
2
SDS
AS
Starting Tj ( C)
0.6
V
% = f(T
); parameter T
150 C
BR DSS
80
0.8
L
V
j
VDS
)
100
T.U.T.
BR DSS
Product specification
Tj = 25 C
1
PHB10N40
120
shunt
j
R 01
V
PHP10N40
1.2
DD
-
+
140
Rev 1.000
-ID/100
VDD
1.4