HMP451S6MMP8C Hynix Semiconductor, HMP451S6MMP8C Datasheet - Page 15

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HMP451S6MMP8C

Manufacturer Part Number
HMP451S6MMP8C
Description
200pin Unbuffered Ddr2 Sdram So-dimms Based On 2gb Version
Manufacturer
Hynix Semiconductor
Datasheet
Rev. 0.1 / May. 2008
Notes:
1. For details and notes, please refer to the relevant Hynix component datasheet(H5PS4G83MMP).
2. 0°C ≤ T
3. 85°C < T
CAS to CAS command delay
Write recovery time
Auto precharge write recovery + precharge
time
Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-
read command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Average periodic Refresh Interval
CASE
CASE
Parameter
≤ 85°C
≤ 95°C
Symbol
tAONPD
tXARDS
tAOFPD
tAOND
tXARD
tAOFD
tANPD
tDelay
tXSNR
tXSRD
tAXPD
tWTR
tAON
tCCD
tAOF
tREFI
tREFI
tDAL
tRTP
tCKE
tOIT
tWR
tXP
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
tIS+tCK+tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
tAC(min)
tAC(min)
WR+tRP
7 - AL
min
200
2.5
7.5
7.5
15
2
2
3
2
3
8
0
-
-
2
DDR2-667
tAC(max)+ 0.6
tAC(max)+0.7
tAC(max)+1
tAC(max)+1
2.5tCK+
2tCK+
max
2.5
7.8
3.9
12
2
-
-
-
-
-
-
-
-
-
-
-
tIS+tCK+tIH
tAC(min)+2
tAC(min)+2
tRFC + 10
tAC(min)
tAC(min)
WR+tRP
8 - AL
min
200
7.5
7.5
2.5
15
2
2
2
3
2
3
8
0
-
-
DDR2-800
tAC(max)+ 0.6
tAC(max)+0.7
tAC(max)+1
tAC(max)+1
2.5tCK+
2tCK+
max
2.5
7.8
3.9
12
2
-
-
-
-
-
-
-
-
-
-
-
-
-
- continued -
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
2
3
15

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