HMP451S6MMP8C Hynix Semiconductor, HMP451S6MMP8C Datasheet - Page 9

• Manufacturer Part Number: HMP451S6MMP8C
• Description: 200pin Unbuffered Ddr2 Sdram So-dimms Based On 2gb Version
• Manufacturer: Hynix Semiconductor

Rev. 0.1 / May. 2008
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Notes:
1. The VDDQ of the device under test is referenced.
OUTPUT DC CURRENT DRIVE
Notes:
1. V
2. V
3. The dc value of V
4. The values of I
Symbol
The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define
Symbol
V
drive current capability to ensure V
SSTL_18 receiver.
a convenient driver current for measurement.
I
I
DDQ
DDQ
DDQ
OH(dc)
OL(dc)
V
OTR
= 1.7 V; V
= 1.7 V; V
- 280 mV.
Output Minimum Source DC Current
Output Minimum Sink DC Current
Output Timing Measurement Reference Level
OH
OUT
OUT
(dc) and I
REF
= 1420 mV. (V
= 280 mV. V
applied to the receiving device is set to V
OL
(dc) are based on the conditions given in Notes 1 and 2. They are used to test device
OUT
Parameter
Parameter
OUT
IH
/I
min plus a noise margin and V
OL
- V
must be less than 21 ohm for values of V
DDQ
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
)/I
OH
must be less than 21 ohm for values of V
TT
IL
max minus a noise margin are delivered to an
SSTl_18
- 13.4
13.4
0.5 * V
SSTL_18
OUT
DDQ
between 0 V and 280 mV.
OUT
Units
between V
mA
mA
Units
V
DDQ
Notes
1, 3, 4
2, 3, 4
Notes
and
1
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