FMA18N25G Fuji Electric holdings CO.,Ltd, FMA18N25G Datasheet - Page 4

• Manufacturer Part Number: FMA18N25G
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

Dynamic Ratings
Forward
Input Capacitance
Output Capacitance
Reverse Transfer
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Diode Forward
Reverse Recovery
Reverse Recovery
7.Thermal Resistance
Channel to Case
Channel to Ambient
Note *1 : Tch 150 C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25 ℃ ,I
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : I
Fuji Electric Device Technology Co.,Ltd.
Transconductance g
Description
Description
Description
E
See to the 'Maximum Avalanche Energy' graph of page 18/19.
See to the 'Maximum Transient Thermal impedance' graph of page 19/19.
F
Capacitance Crss
AS
 -I
On-Voltage V
limited by maximum channel temperature and avalanche current.
D
,-di/dt=50A/  s,Vcc  BV
Charge Qrr
Time trr
Ciss
Coss
td(on)
tr
td(off)
tf
Q
Q
Q
Rth(ch-a)
Rth(ch-c)
Symbol
fs
Symbol
SD
G
GS
GD
AS
=8.0A,L=10.0mH,Vcc=25V,R
I
V
V
V
f=1MHz
V
V
I
R
V
I
V
I
V
I
V
-di/dt=100A/  s
T
D
D
D
F
F
ch
DS
DS
GS
cc
GS
cc
GS
=18.0A
GS
=18.0A
GS
GS
=9.0A
=9.0A
=18A
DSS
Symbol
=150V
=125V
=25°C
=25V
=25V
=0V
=10V
=10V
=0V
=0V
=10 
,Tch  150  C
Conditions
Conditions
Tch=25°C
G
=50 Ω ,See Fig.1 and Fig.2
MS5F06392
min.
min.
min.
4.0
-
-
-
-
-
-
-
-
-
-
-
-
-
1000
1.20
typ.
185
typ.
typ.
8.0
6.0
5.0
3.5
6.0
0.2
1.8
15
30
26
11
1500
max.
max.
max.
1.50
58.0
2.60
280
9.0
7.5
5.3
9.0
23
45
39
17
-
-
-
4 / 19
H04-004-03
 C/W
 C/W
Unit
Unit
Unit
μC
μs
nC
pF
ns
S
V