NT2GC64B8HC0NS Nanya Techology, NT2GC64B8HC0NS Datasheet - Page 11

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NT2GC64B8HC0NS

Manufacturer Part Number
NT2GC64B8HC0NS
Description
Un-buffered Ddr3 So-dimm
Manufacturer
Nanya Techology
Datasheet
PC3-8500 / PC3-10600
Un-buffered DDR3 SO-DIMM
NT2GC64B8HC0NS
Standard Speed Bins
REV 1.0
12/2009
ACT to ACT or REF command period
Internal read command to first data
ACT to internal read or write delay
ACT to PRE command period
PRE command period
CL
6
6
6
7
7
7
8
8
8
9
9
9
Supported CWL settings
Supported CL settings
Parameter
CL-nRCD-nRP
Speed Bin
CWL
7,8
7,8
5,6
5
6
5
6
5
6
7
7
8
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
tCK(avg)
Symbol
tRCD
tRAS
tRC
tAA
tRP
13.125
13.125
13.125
50.625
DDR3-1066 (-BE)
1.875
1.875
37.5
min
2.5
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
11
6, 7, 8
7-7-7
5,6
9*tREFI
max
<2.5
<2.5
3.3
20
-
-
-
NANYA reserves the right to change products and specifications without notice.
DDR3-1333 (-CG)
1.875
13.5
13.5
13.5
49.5
min
2.5
1.5
36
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
6, 7, 8, 9
9-9-9
5,6,7
9*tREFI
© NANYA TECHNOLOGY CORPORATION
<1.875
max
<2.5
3.3
20
-
-
-
nCK
nCK
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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