nt1gt64u8hb0bn-3c Nanya Techology, nt1gt64u8hb0bn-3c Datasheet

nt1gt64u8hb0bn-3c

Manufacturer Part Number

nt1gt64u8hb0bn-3c

Description

Pc2-4200 / Pc2-5300 / Pc-6400 Unbuffered Ddr2 So-dimm

Manufacturer

Nanya Techology

Datasheet

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NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN

NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN

256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64

PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM

200 pin Unbuffered DDR2 SO-DIMM

Based on DDR2-533/667/800 32Mx16/64Mx8 SDRAM B-Die

Features

• Performance:

Speed Sort

DIMM CAS Latency

fck – Clock Freqency

tck – Clock Cycle

fDQ – DQ Burst Freqency

• 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM)

• 32Mx64 and 64Mx64 Unbuffered DDR2 SO-DIMM based on

• 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx8 DDR2

• Intended for 266MHz, 333MHz, and 400MHz applications

• Inputs and outputs are SSTL-18 compatible

• V

• SDRAMs have 4 internal banks for concurrent operation

• Differential clock inputs

• Data is read or written on both clock edges

• DRAM DLL aligns DQ and DQS transitions with clock transitions.

• Address and control signals are fully synchronous to positive

• Programmable Operation:

Description

NT256T64UH4B0FN, NT512T64UH8B0FN, NT1GT64U8HB0BN, NT256T64UH4B0CN, NT512T64UH8B0CN, and NT1GT64U8HB0AN

are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM),

organized as one rank of 32x64 (256MB), two ranks of 64x64 (512MB), and two ranks of 128x64(1GB) high-speed memory array. Modules

use four 32Mx16 (256MB) and eight 32Mx16 (512MB) 84-ball BGA packaged devices. Modules use sixteen 64Mx8 (1GB) 60-ball BGA

packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of

these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance,

flexible 8-byte interface in a space-saving footprint.

The DIMM is intended for use in applications operating of 266MHz/333MHz/400MHz clock speeds and achieves high-speed data transfer

rates of 533MHz/667MHz/800MHz. Prior to any access operation, the device

programmed into the DIMM by address inputs A0-A13 and I/O inputs BA0 and BA1 using the mode register set cycle.

The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of serial PD

data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

REV 1.2

08/2007

32Mx16 DDR2 SDRAM B-Die devices.

SDRAM B-Die devices.

clock edge

- DIMM

= V

DDQ

= 1.8V

Latency: 3, 4, 5 (-37B/-3C/-25C)

Latency: 4, 5, 6 (-25D)

0.1V

PC2-4200

-37B

3.75

266

533

PC2-5300

-3C

333

667

PC2-6400

-25D

400

800

2.5

PC2-6400

-25C

• Auto Refresh (CBR) and Self Refresh Modes

• Automatic and controlled precharge commands

• 13/10/1 Addressing (256MB)

• 7.8 µs Max. Average Periodic Refresh Interval

• Serial Presence Detect

• Gold contacts

• SDRAMs in 84-ball BGA Package (256MB & 512MB)

• SDRAMs in 60-ball BGA Package (1GB)

• RoHS compliance

• Halogen free (p/n list in page 2)

400

800

2.5

- Burst Type: Sequential or Interleave

- Burst Length: 4, 8

- Operation: Burst Read and Write

13/10/2 Addressing (512MB)

14/10/2 Addressing (1GB)

MHz

Unit

latency and burst/length/operation type must be

NANYA reserves the right to change products and specifications without notice.

Related parts for nt1gt64u8hb0bn-3c

nt1gt64u8hb0bn-3c Summary of contents

Page 1

... Latency (-25D) Description NT256T64UH4B0FN, NT512T64UH8B0FN, NT1GT64U8HB0BN, NT256T64UH4B0CN, NT512T64UH8B0CN, and NT1GT64U8HB0AN are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as one rank of 32x64 (256MB), two ranks of 64x64 (512MB), and two ranks of 128x64(1GB) high-speed memory array. Modules use four 32Mx16 (256MB) and eight 32Mx16 (512MB) 84-ball BGA packaged devices ...

Page 2

... DDR2-533 PC2-4200 266MHz (3.75ns @ NT1GT64U8HB0BN-25C DDR2-800 PC2-6400 400MHz (2.5ns @ NT1GT64U8HB0AN-25C DDR2-800 PC2-6400 400MHz (2.5ns @ NT1GT64U8HB0BN-25D DDR2-800 PC2-6400 400MHz (2.5ns @ NT1GT64U8HB0BN-3C DDR2-667 PC2-5300 333MHz (3ns @ NT1GT64U8HB0AN-3C DDR2-667 PC2-5300 333MHz (3ns @ NT1GT64U8HB0BN-37B DDR2-533 PC2-4200 266MHz (3.75ns @ Note: NT256T64UH4B0CN– ...

Page 3

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Pin Description CK0, CK1, Differential Clock Inputs , CKE0, CKE1 Clock Enable Row Address Strobe Column Address Strobe Write Enable , Chip Selects ...

Page 4

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1 (SSTL) Edge Negative , (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active ...

Page 5

Page 6

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Functional Block Diagram (512MB – 2 Ranks, 32Mx16 DDR2 SDRAMs) REV 1.2 08/2007 6 © NANYA TECHNOLOGY CORPORATION NANYA reserves the right to change products and specifications without notice. ...

Page 7

Page 8

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (256MB – 1 Rank, 32Mx16 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device ...

Page 9

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (256MB – 1 Rank, 32Mx16 DDR2 SDRAMs) Byte Description 41 Minimum Core Cycle Time ( Min. Auto Refresh Command Cycle Time (t ...

Page 10

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (512MB – 2 Ranks, 32Mx16 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device ...

Page 11

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detect (512MB – 2 Ranks, 32Mx16 DDR2 SDRAMs) Byte Description 41 Minimum Core Cycle Time ( Min. Auto Refresh Command Cycle Time (t ...

Page 12

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Serial Presence Detec t (1GB – 2 Ranks, 64Mx8 DDR2 SDRAMs) Byte Description 0 Number of Serial PD Bytes Written during Production 1 Total Number of Bytes in Serial PD device ...

Page 13

... SPD Reversion 63 Checksum for Byte 0-62 64-71 Manufacturer’s JEDEC ID Code 72 Module Manufacturing Location 73-91 Module Part number 92-255 Reserved Note: 1. Module part number: NT1GT64U8HB0BN-37B 4E5431475436345538484230424E2D33374220 NT1GT64U8HB0BN-3C 4E5431475436345538484230424E2D33432020 NT1GT64U8HB0BN-25D 4E5431475436345538484230424E2D32354420 NT1GT64U8HB0BN-25C 4E5431475436345538484230424E2D32354320 REV 1.2 08/2007 (Part SPD Entry Value -37B -3C -25D -25C 60ns 57.5ns ...

Page 14

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Environmental Requirements Symbol Operating Temperature (ambient) T OPR Operating Humidity (relative) H OPR Storage Temperature T STG Storage Humidity (without condensation) H STG Barometric pressure (operating & storage 9850ft. ...

Page 15

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM ODT DC Electrical Characteristics Parameter/Condition Rtt effective impedance value for EMRS(A6,A2)=0,1; 75ohm Rtt effective impedance value for EMRS(A6,A2)=1,0; 150ohm Rtt effective impedance value for EMRS(A6,A2)=1,1; 50ohm ...

Page 16

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V 0.1V (256MB, 1 Rank, 32Mx16 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t DQ, DM, and DQS inputs changing twice per clock cycle ...

Page 17

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V 0.1V (512MB, 2 Ranks, 32Mx16 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t DQ, DM, and DQS inputs changing twice per clock cycle ...

Page 18

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Operating, Standby, and Refresh Currents ° ° 1.8V CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge; t DQ, DM, and DQS inputs changing twice per clock cycle; address and ...

Page 19

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V 0.1V; V CASE DDQ DD Symbol Parameter DQ output access time from CK/ ...

Page 20

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V 0.1V; V CASE DDQ DD Symbol Parameter Active bank A to Active bank B command ...

Page 21

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Package Dimensions (256MB, 1 Rank, 32Mx16 DDR2 SDRAMs > < 7" & Note: Device position and scale are only for reference. ...

Page 22

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Package Dimensions (512MB – 2 Ranks, 32Mx16 DDR2 SDRAMs > < 7" & Note: Device position and scale are only for reference. ...

Page 23

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Package Dimensions (1GB – 2 Ranks, 32Mx8 DDR2 SDRAMs) (2X)Θ 1. 2.15 11.40 4.20 2.70 Detail A 4.00+/-0.10 1.00+/- 0.1 Note: All dimensions are typical with tolerances of +/- 0.15 unless otherwise stated. ...

Page 24

... NT256T64UH4B0FN / NT512T64UH8B0FN / NT1GT64U8HB0BN NT256T64UH4B0CN / NT512T64UH8B0CN / NT1GT64U8HB0AN 256MB: 32M 512MB: 64M 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM Revision Log Rev Date 0.1 01/2006 Preliminary Release 0.2 03/2006 Add PC2-6400 (DDR2-800MHz) 1.0 06/2006 Official Release 1.1 07/2007 Modified 256MB/512MB DDR2-800 item 1.2 08/2007 ...

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