nt1gt64u8hb0by Nanya Techology, nt1gt64u8hb0by Datasheet

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nt1gt64u8hb0by

Manufacturer Part Number
nt1gt64u8hb0by
Description
256mb 32m X 64 / 512mb 64m X 64 / 1gb 128m X 64 Unbuffered Ddr2 Sdram Dimm   
Manufacturer
Nanya Techology
Datasheet
NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY
256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64
Unbuffered DDR2 SDRAM DIMM
240pin Unbuffered DDR2 SDRAM MODULE
Based on 64Mx8 & 32Mx16 DDR2 SDRAM B Die
Features
• Performance:
• JEDEC Standard 240-pin Dual In-Line Memory Module
• 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2
• 64Mx64 and 128Mx64 DDR2 Unbuffered DIMM based on
• Intended for 266MHz, 333MHz, and 400MHz applications
• Inputs and outputs are SSTL-18 compatible
• V
• SDRAMs have 4 internal banks for concurrent operation
• Differential clock inputs
• Data is read or written on both clock edges
• Bi-directional data strobe with one clock cycle preamble and
• Address and control signals are fully synchronous to positive
• Programmable Operation:
Description
NT256T64UH4B0FY, NT512T64U88B0BY, and NT1GT64U8HB0BY are 240-Pin Double Data Rate 2 (DDR2) Synchronous DRAM
Unbuffered Dual In-Line Memory Module (UDIMM), organized as one-rank 32Mx64 and 64Mx64 and two ranks 128Mx64 high-speed
memory array. NT256T64UH4B0FY use four 32Mx16 DDR2 SDRAMs. NT512T64U88B0BY use eight 64Mx8 DDR2 SDRAMs.
NT1GT64U8HB0BY use sixteen 64Mx8 DDR2 SDRAMs. These DIMMs are manufactured using raw cards developed for broad industry
use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2
SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint.
The DIMM is intended for use in applications operating up to 233 MHz (333MHz and 400MHz) clock speeds and achieves high-speed
data transfer rates of up to 533MHz (667MHz and 800MHz). Prior to any access operation, the device
operation type must be programmed into the DIMM by address inputs A0-A14 and I/O inputs BA0 and BA1 using the mode register set
cycle.
The DIMM uses serial presence-detect implemented via a serial 2,048-bit EEPROM using a standard IIC protocol. The first 128 bytes of
serial PD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.
REV 1.2
03/2007
f
t
f
CK
CK
DQ
one-half clock post-amble
clock edge
SDRAM
64Mx8 DDR2 SDRAM
DD
DIMM
Clock Frequency
Clock Cycle
DQ Burst Frequency
= V
Speed Sort
DDQ
(NT5TU32M16BG)
= 1.8Volt ± 0.1
Latency
*
(NT5TU64M8BE)
PC2-4200
-37B
3.75
266
533
4
PC2-5300
333
667
-3C
5
3
PC2-6400
-25D
400
800
2.5
6
PC2-6400
1
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
-25C
400
800
2.5
• Auto Refresh (CBR) and Self Refresh Modes
• Automatic and controlled precharge commands
• 13/10/1 Addressing (row/column/rank) – 256MB
• 14/10/1 Addressing (row/column/rank) – 512MB
• 14/10/2 Addressing (row/column/rank) – 1GB
• 7.8 µs Max. Average Periodic Refresh Interval
• Serial Presence Detect
• Gold contacts
• SDRAMs in 60 and 84 ball FBGA Package
• RoHS compliance
5
- Device
- Burst Type: Sequential or Interleave
- Burst Length: 4, 8
- Operation: Burst Read and Write
MHz
MHz
Unit
ns
Latency: 4, 5, 6
latency and burst / length /
© NANYA TECHNOLOGY CORP.

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nt1gt64u8hb0by Summary of contents

Page 1

... NT256T64UH4B0FY use four 32Mx16 DDR2 SDRAMs. NT512T64U88B0BY use eight 64Mx8 DDR2 SDRAMs. NT1GT64U8HB0BY use sixteen 64Mx8 DDR2 SDRAMs. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All NANYA DDR2 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” ...

Page 2

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Ordering Information Part Number NT256T64UH4B0FY-37B 266MHz (3.75ns NT256T64UH4B0FY-3C 333MHz (3.00ns NT256T64UH4B0FY-25D 400MHz (2.50ns NT256T64UH4B0FY-25C 400MHz (2.50ns NT512T64U88B0BY-37B 266MHz (3.75ns NT512T64U88B0BY-3C 333MHz (3 ...

Page 3

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Pinout Pin Front Pin Front REF DQ0 DQ1 DQS0 ...

Page 4

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Input/Output Functional Description Symbol Type Polarity Positive CK0, CK1, CK2 (SSTL) Edge Negative , , (SSTL) Edge Active CKE0, CKE1 (SSTL) High Active , (SSTL) Low Active , , (SSTL) ...

Page 5

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (256MB, 1 Rank, 32Mx16 DDR2 SDRAMs " " " " & & ' & ' & ' & & & ' ()* ' & -./ ...

Page 6

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs & & ' & & %& ()* ' & -./ -42 )-* ) ' ' * ) ' REV 1.2 03/2007 * )-' 35 3),-+ ...

Page 7

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Functional Block Diagram (1GB, 2 Rank, 64Mx8 DDR2 SDRAMs & & ' & ' & ' & & & & & ()* ' & )-' 35 ...

Page 8

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- 32Mx64 1 BANK UNBUFFERED DDR2 SDRAM DIMM based on 32Mx16, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 9

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- 32Mx64 1 BANK UNBUFFERED DDR2 SDRAM DIMM based on 32Mx16, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 t and Byte ...

Page 10

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect – 64Mx64 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 11

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- 64Mx64 1RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 t and Byte ...

Page 12

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect – 128Mx64 2 RANKs UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 0 Number of Serial PD Bytes Written during Production ...

Page 13

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Serial Presence Detect -- 128Mx64 1 RANK UNBUFFERED DDR2 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 1.8V DDR2 SDRAMs with SPD Byte Description 40 Extension of Byte 41 t and Byte ...

Page 14

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM SPD Note Serial PD Data Entry SPD Entry Value NT256T64UH4B0FY-37B 4E54323536543634554834423046592D333742 NT256T64UH4B0FY-3C 4E54323536543634554834423046592D334320 NT256T64UH4B0FY-25D 4E54323536543634554834423046592D323544 NT256T64UH4B0FY-25C 4E54323536543634554834423046592D323543 NT512T64U88B0BY-37B 4E54353132543634553838423042592D333742 NT512T64U88B0BY-3C 4E54353132543634553838423042592D334320 NT512T64U88B0BY-25D 4E54353132543634553838423042592D323544 NT512T64U88B0BY-25C 4E54353132543634553838423042592D323543 NT1GT64U8HB0BY-37B ...

Page 15

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Absolute Maximum Ratings Symbol Voltage on I/O pins relative to Vss OUT Voltage on VDD supply relative to Vss V DD Voltage on VDDQ supply relative to Vss V DDQ Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 16

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (256MB, 1 Rank, 32Mx16 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle ...

Page 17

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle ...

Page 18

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Operating, Standby, and Refresh Currents ° ° 1.8V ± 0.1V (1GB, 2 Ranks, 64Mx8 DDR2 SDRAMs) CASE DDQ DD Symbol Parameter/Condition Operating Current: one bank; active/precharge DQ, DM, and DQS inputs changing twice per clock cycle ...

Page 19

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t DQ output access time from CK DQS output access time from CK/ ...

Page 20

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM AC Timing Specifications for DDR2 SDRAM Devices Used on Module ( ° ° 1.8V ± 0.1V; V CASE DDQ DD Symbol Parameter t Write recovery time without Auto-Precharge WR WR Write recovery time with Auto-Precharge ...

Page 21

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (256MB, 1 Rank, 32Mx16 DDR2 SDRAMs) FRONT 133. 35 5.250 131.35 5.171 Θ 2.5 0.098 BACK 63.00 2.480 Detail 5.00 0.20 1.50 +/- 0.1 0.059 +/- 0.004 Note: All dimensions are typical with tolerances 0.15 (0.006) unless otherwise stated . ...

Page 22

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (512MB, 1 Rank, 64Mx8 DDR2 SDRAMs) FRONT 133.35 5.250 131.35 5.171 Θ 2.5 0.098 63.00 2.480 Detail 5.00 0.20 1.50 +/- 0. 1 0.059 +/- 0.004 Note: All dimensions are typical with tolerances 0.15 (0.006) unless otherwise stated . ...

Page 23

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Package Dimensions (1GB, 2 Rank, 64Mx8 DDR2 SDRAMs) Note: Device position is only for reference. REV 1.2 03/2007 23 © NANYA TECHNOLOGY CORP. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. ...

Page 24

... NT256T64UH4B0FY / NT512T64U88B0BY / NT1GT64U8HB0BY 256MB: 32M 512MB: 64M 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM Revision Log Rev Date 0.1 10/2005 Preliminary Release 0.2 03/2006 Update speed grade and related data. Add IDD current values. 0.3 04/2006 Update tIS/tQHS spec. 0.4 06/2006 Update -25C. Added 256MB UDIMM. ...

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