MBM30LV0032 Fujitsu Microelectronics, Inc., MBM30LV0032 Datasheet - Page 17

• Manufacturer Part Number: MBM30LV0032
• Description: 32m 4m X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

(Continued)
Notes: 1. AC Test Conditions:
ALE Low to RE Low (Read Cycle)
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE High to Ready (in Case of Interception by CE in Read Mode)
(Note 2)
Device Resetting Time (Read/Program/Erase)
R/B
CE
RE
2. The time to go from CE high to Ready depends on the pull-up resister of the R/B pin (see Application
3. In case that toggling CE to high after access to the last address (address 527) in the resister in the read
Notes (6)) toward the end of this document.
mode (1), (2), and (3), the CE high time must be held for 100 ns or more when the delay time of CE with
respect to RE is 0 to 200 ns (see the figure below). When the CE delay time is within 30 ns, the device
is kept in the Ready state and will output no Busy signal.
Input level
Input comparison level
Output data comparison level
Output load
Load capacitance (C
Transition time (t
Operating range
525
509
Parameter
T
)
L
)
526
510
V
CC
= 2.7 to 3.6 V
50 pF
527
511
2.4 V/0.4 V
1.5 V/1.5 V
1.5 V/1.5 V
A
1TTL
5 ns
t
V
CEH
Busy
CC
A : 0 to 30 ns
Symbol
= 3.0 to 3.6 V
t
t
t
t
CRY
AR2
RST
100 pF
100 ns
RB
MBM30LV0032
Min.
Busy signal is not output.
50
—
—
—
*
Value
5/10/500
50 + tr
(R/B)
Max.
*V
100
—
IH
or V
IL
Unit
ns
ns
ns
s
17