MX26L12811MC ETC-unknow, MX26L12811MC Datasheet - Page 28

• Manufacturer Part Number: MX26L12811MC
• Description: 128m [x8/x16] Single 3v Page Mode Mtp Memory
• Manufacturer: ETC-unknow

Notes:
1. Sampled, not 100% tested.
2. Test conditions TA=25 C, f=1.0MHz
ERASE AND PROGRAMMING PERFORMANCE(1)
Note:
P/N:PM0990
LATCH-UP CHARACTERISTICS
CAPACITANCE TA=0 C to 70 C, VCC=3.0V~3.6V
DATA RETENTION
PARAMETER
Block Erase Time
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
Byte Program Time (Using Word/Byte Program Command)
Block Program Time (Using Write to Buffer Command)
Block Erase/Program Cycles
Input Voltage with respect to GND on OE
Input Voltage with respect to GND on all power pins, Address pins, CE and WE
Input Voltage with respect to GND on all I/O pins
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
Parameter Symbol
CIN
COUT
CIN2
Parameter
Minimum Pattern Data Retention Time
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25 C,3.3V. Additionally programming typically assume checkerboard pattern.
Parameter Description
Input Capacitance
Output Capacitance
Control Pin Capacitance
28
Test Conditions
150
125
VOUT=0
Test Set
VIN=0
VIN=0
MX26L12811MC
MIN.
10
TYP.(2)
LIMITS
218
210
2.0
0.8
TYP
Min
8.5
7.5
10
20
6
-100mA
-1.0V
-1.0V
-1.0V
MIN.
MAX.
15.0
900
900
2.4
MAX
7.5
12
9
REV. 1.0, OCT. 29, 2003
Years
Years
Unit
VCC + 1.0V
2 VCCmax
UNITS
Cycles
+100mA
UNIT
12.5V
MAX.
pF
pF
pF
sec
sec
us
us