NP160N04TDG Renesas Electronics Corporation., NP160N04TDG Datasheet

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NP160N04TDG

Manufacturer Part Number
NP160N04TDG
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D18761EJ2V0DS00 (2nd edition)
Date Published July 2007 NS CP(K)
Printed in Japan
DESCRIPTION
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
• Super low on-state resistance
• High Current Rating
• Logic level drive type
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Notes 1. PW ≤ 10
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
R
R
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
I
D(DC)
DS(on)1
DS(on)2
NP160N04TDG-E1-AY
NP160N04TDG-E2-AY
2. Starting T
3. R
= ±160 A
PART NUMBER
= 1.6 mΩ TYP. / 2.0 mΩ MAX. (V
= 2.2 mΩ TYP. / 5.4 mΩ MAX. (V
G
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 25 Ω, T
μ
ch
s, Duty Cycle ≤ 1%
Note1
C
= 25°C, V
ch(peak)
= 25°C)
Note
Note
Note2
DS
C
A
GS
= 25°C)
= 25°C)
= 0 V)
Note3
≤ 150°C
= 0 V)
Note3
DD
N-CHANNEL POWER MOS FET
= 20 V, R
LEAD PLATING
Pure Sn (Tin)
The mark <R> shows major revised points.
GS
GS
A
G
R
R
= 25°C)
= 10 V, I
= 4.5 V, I
V
V
I
I
P
P
T
T
E
I
E
= 25 Ω, V
DATA SHEET
th(ch-C)
th(ch-A)
D(DC)
D(pulse)
AR
ch
stg
DSS
GSS
T1
T2
AS
AR
SWITCHING
D
D
GS
= 80 A)
= 80 A)
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 100
0.68
83.3
−55 to +175
Tape 800 p/reel
±160
±640
±20
220
175
372
372
1.8
PACKING
40
61
°C/W
°C/W
NP160N04TDG
mJ
mJ
°C
°C
W
W
V
V
A
A
A
μ
H
TO-263-7pin (MP-25ZT) typ. 1.5 g
PACKAGE
(TO-263-7pin)
2007

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NP160N04TDG Summary of contents

Page 1

... DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER Note NP160N04TDG-E1-AY Note NP160N04TDG-E2-AY Note Pb-free (This product does not contain Pb in the external electrode). FEATURES • Super low on-state resistance R = 1.6 mΩ TYP. / 2.0 mΩ MAX. (V ...

Page 2

... TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ DS τ μ ≤ Duty Cycle Data Sheet D18761EJ2V0DS NP160N04TDG MIN. TYP. MAX. UNIT μ ±100 nA 1.5 2.0 2 1.6 2.0 mΩ 2.2 5.4 mΩ 10500 15750 pF 980 1470 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 200 150 100 150 175 10 100 R = 83.3°C/Wi th(ch- 0.68°C/Wi th(ch- 100 Pulse Width - s Data Sheet D18761EJ2V0DS NP160N04TDG 50 75 100 125 150 175 - Case Temperature - ° Single Pulse 100 1000 3 ...

Page 4

... 250 μ 175 225 0.1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1000 0 Data Sheet D18761EJ2V0DS NP160N04TDG Pulsed = −55° 25°C 75°C 150°C 175° Gate to Source Voltage - −55°C ...

Page 5

... Q G REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = 100 A/μ 0 Diode Forward Current - A F Data Sheet D18761EJ2V0DS NP160N04TDG C iss C oss C rss 1 10 100 160 Pulsed ...

Page 6

... Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18761EJ2V0DS NP160N04TDG ...

Page 7

... NEC 160N04 DG RECOMMENDED SOLDERING CONDITIONS The NP160N04TDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NP160N04TDG Not all M8E 02. 11-1 ...

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