NP160N04TDG Renesas Electronics Corporation., NP160N04TDG Datasheet - Page 4

• Manufacturer Part Number: NP160N04TDG
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

4
700
600
500
400
300
200
100
2.5
1.5
0.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
2
1
0
0
6
5
4
3
2
1
0
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
-75
0
1
Pulsed
V
-25
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
T
DS
0.5
ch
V
- Drain to Source Voltage - V
- Channel Temperature - ° C
GS
I
D
= 4.5 V
25
10
- Drain Current - A
10 V
1
75
1.5
V
125
100
GS
= 10 V
V
I
D
4.5 V
DS
= 250 μA
2
175
= V
Pulsed
GS
Data Sheet D18761EJ2V0DS
1000
225
2.5
1000
1000
0.01
100
100
0.1
10
10
12
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
1
8
6
4
2
0
0.1
1
FORWARD TRANSFER CHARACTERISTICS
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
V
GS
2
GS
- Gate to Source Voltage - V
5
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
150°C
175°C
3
T
ch
10
T
= −55°C
A
= −55°C
NP160N04TDG
25°C
75°C
4
150°C
175°C
25°C
75°C
10
V
Pulsed
15
DS
V
Pulsed
I
Pulsed
5
D
DS
= 10 V
= 80 A
= 5 V
100
20
6