FX6ASJ-03 Renesas Electronics Corporation., FX6ASJ-03 Datasheet - Page 2

• Manufacturer Part Number: FX6ASJ-03
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
FX6ASJ-03
Electrical Characteristics
Rev.2.00
Nov 21, 2006
Parameter
page 2 of 6
Rth(ch-c)
Symbol
V
V
V
r
r
Coss
| y
(BR)DSS
DS(ON)
DS(ON)
Crss
Ciss
t
t
I
I
DS(ON)
V
GS(th)
d(on)
d(off)
GSS
DSS
t
t
t
SD
rr
fs
r
f
|
Min.
–1.3
–30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
– 0.69
Typ.
–1.8
0.23
0.46
–1.0
550
165
2.6
45
14
32
14
40
—
—
—
—
9
– 0.87
Max.
–0.1
–2.3
0.29
0.62
–1.5
6.25
—
—
—
—
—
—
—
—
—
—
0.1
Unit
C/W
mA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
I
V
V
I
I
I
I
I
V
f = 1MHz
V
V
R
I
Channel to case
I
D
D
D
D
D
D
S
S
GS
DS
DS
DD
GS
GEN
= –3 A, V
= –3 A, dis/dt = 50 A/ s
= –1 mA, V
= –1 mA, V
= –3 A, V
= –1 A, V
= –3 A, V
= –3 A, V
= –30 V, V
= –10 V, V
= 20 V, V
= –15 V, I
= –10 V,
Test conditions
= R
GS
GS
GS
GS
GS
DS
= 50
(Tch = 25°C)
GS
DS
D
= – 5 V
= 0 V
= –10 V
= – 4 V
= –10 V
GS
GS
DS
= –3 A,
= 0 V
= –10 V
= 0 V
= 0 V
= 0 V,