FX6ASJ-03 Renesas Electronics Corporation., FX6ASJ-03 Datasheet - Page 5
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FX6ASJ-03
Manufacturer Part Number
FX6ASJ-03
Description
High-speed Switching Use Pch Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.FX6ASJ-03.pdf
(7 pages)
FX6ASJ-03
Rev.2.00
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
–1
7
5
3
2
7
5
3
2
1
0
Nov 21, 2006
Switching Time Measurement Circuit
R
V
I
Pulse Test
V
I
D
Channel Temperature Tch (°C)
D
GEN
Channel Temperature Tch (°C)
–50
–50
Channel Temperature (Typical)
Channel Temperature (Typical)
GS
GS
Vin Monitor
= 1/2 I
= –1mA
On-State Resistance vs.
= –10V
= 0V
Breakdown Voltage vs.
D
R
0
0
GS
page 5 of 6
50
50
D.U.T.
100
100
R
V
L
150
150
DD
Vout
Monitor
10
10
10
10
–1
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
0.2
–4
0.5
D = 1.0
t d(on)
– 4.0
– 3.2
– 2.4
– 0.8
2 3 5 7
–1.6
Vout
Vin
Transient Thermal Impedance Characteristics
0
0.05
0.02
0.01
Single Pulse
0.1
10
V
I
D
–50
Channel Temperature Tch (°C)
Channel Temperature (Typical)
DS
–3
= –1mA
2 3 5 7
10%
= –10V
Threshold Voltage vs.
10%
Switching Waveform
Pulse Width tw (s)
10
90%
0
t r
–2
2 3 5 7
50
10
–1
t d(off)
2 3 5 7
100
10
0
150
90%
2 3 5 7
90%
10%
P
D =
tw
DM
t f
10
T
1
tw
T
2 3 5 7
10
2