FX6ASJ-03 Renesas Electronics Corporation., FX6ASJ-03 Datasheet - Page 4

• Manufacturer Part Number: FX6ASJ-03
• Description: High-speed Switching Use Pch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-03
Rev.2.00
Nov 21, 2006
–10
–10
10
10
10
– 8
– 6
– 4
– 2
– 8
– 6
– 4
– 2
0
0
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
–3 –5–7
0
0
Tch = 25°C
f = 1MHz
V
Tc = 25°C
V
Pulse Test
Transfer Characteristics (Typical)
Drain-Source Voltage V
Drain-Source Voltage (Typical)
GS
DS
Gate-Source Voltage V
–10
= 0V
Gate-Source Voltage vs.
= –10V
– 2
Gate Charge Qg (nC)
Gate Charge (Typical)
4
0
–2–3 –5–7
Capacitance vs.
page 4 of 6
– 4
8
– 25V
– 20V
V
–10
DS
– 6
1
–2–3
12
= –10V
Tch = 25°C
I
Ciss
Coss
Crss
–5–7
D
GS
DS
= – 6A
– 8
16
–10
(V)
(V)
2
–2–3
–10
20
–20
–16
–12
10
10
10
10
10
– 8
– 4
–10
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
–10
1
0
2
1
0
0
td(on)
Switching Characteristics (Typical)
–1
V
Pulse Test
–1
Forward Transfer Admittance vs.
tr
GS
Source-Drain Voltage V
Source-Drain Diode Forward
–2 –3
–2 –3
– 0.4
= 0V
Characteristics (Typical)
Drain Current (Typical)
Drain Current I
Drain Current I
Tc = 25°C
–5 –7
125°C
–5 –7
– 0.8
td(off)
75°C
–10
–10
Tch = 25°C
V
V
R
DD
GS
GEN
0
–1.2
0
tf
= –15V
= –10V
–2 –3
25°C
–2 –3
= R
D
D
75°C
V
Pulse Test
Tc = 125°C
DS
(A)
(A)
GS
–1.6
SD
= – 5V
–5 –7
= 50Ω
–5
(V)
–7
–2.0
–10
–10
1
1