AP9620GM APEC, AP9620GM Datasheet
AP9620GM
Available stocks
Related parts for AP9620GM
AP9620GM Summary of contents
Page 1
... J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9620GM Pb Free Plating Product BV -20V DSS R 20mΩ DS(ON) I -9. Rating Units -20 ±8 -9.5 -7.6 -76 2.5 0.02 W/℃ ...
Page 2
... AP9620GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
Page 3
... C -8. -6.0V V =-4. Fig 2. Typical Output Characteristics 1.6 I =-9. =-9. =25 ℃ ℃ ℃ ℃ 1.4 1.2 1.0 0.8 0.6 - Fig 4. Normalized On-Resistance AP9620GM Drain-to-Source Voltage (V) DS =4. 100 Junction Temperature ( C) j v.s. Junction Temperature -10V -8.0V -6.0V =-4.0V 8 150 ...
Page 4
... AP9620GM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 1000 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 o C) 100us 1ms 10ms 100ms 0.01 1s 10s DC 0.001 10 100 Fig 8. Effective Transient Thermal Impedance 3 2 ...
Page 5
... SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 1 0.8 0 0.4 0.2 0 1.1 1.3 1.5 AP9620GM ( Junction Temperature ( j Fig 12. Gate Threshold Voltage v.s. Junction Temperature f=1.0MHz Ciss Coss Crss 100 150 o C) ...
Page 6
... AP9620GM -5V Fig 13. Switching Time Circuit -1~-3mA Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.5 x RATED Fig 14. Switching Time Waveform THE OSCILLOSCOPE -4.5V 0.5 x RATED V DS Fig 16. Gate Charge Waveform ...