ap9479gm APEC, ap9479gm Datasheet
ap9479gm
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ap9479gm Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP9479GM RoHS-compliant Product BV 60V DSS R 45mΩ DS(ON Rating Units 60 +25 5.6 4.5 30 2.5 W 0.02 W/℃ ...
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... AP9479GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1 =10V ℃ =25 G 1.4 1.0 0.6 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 1.2 o =25 C 0.8 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9479GM 10V 7. 5.0V 4.5V V =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 Junction Temperature ( ...
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... AP9479GM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...
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ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 9479GM YWWSSS SYMBOLS ...