AP9620GM APEC, AP9620GM Datasheet - Page 2

• Manufacturer Part Number: AP9620GM
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

ΔBV
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
V
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
Electrical Characteristics@T
Source-Drain Diode
Notes:
AP9620GM
DSS
GSS
d(on)
r
d(off)
f
S
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
DSS
/ΔT
j
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
Drain-Source Leakage Current (T
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current ( Body Diode )
Forward On Voltage
2
copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
Parameter
Parameter
2
2
2
j
j
j
=25
=70
=25
o
o
C)
C)
o
C(unless otherwise specified)
2
V
Reference to 25℃, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
f=1.0MHz
V
T
D
D
GS
GS
GS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
D
j
G
D
=-9.5A
=-9.5A
=25℃, I
=V
=1.05Ω
=6Ω,V
=V
=-10V, I
=-20V, V
=-16V, V
=-10V
=-10V
=-15V
=0V, I
=-4.5V, I
=-2.5V, I
=
=-5V
=0V
G
± 8V
GS
=0V , V
Test Conditions
Test Conditions
, I
D
GS
S
D
=-250uA
=-2.5A, V
=-250uA
D
=-4.5V
D
D
GS
GS
=-9.5A
=-9.5A
=-6.0A
S
=0V
=0V
=-1.2V
GS
D
=-1mA
=0V
Min. Typ. Max. Units
Min. Typ. Max. Units
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.037
2158
500
300
845
230
3.5
28
30
26
70
6
-
-
-
-
-
-
-
-
-
±100
-2.08
-1.2
-25
20
35
-1
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
V/℃
mΩ
mΩ
nC
nC
nC
uA
uA
nA
ns
ns
ns
ns
pF
pF
pF
V
V
S
A
V