APTCV60TLM24T3G Microsemi Corporation, APTCV60TLM24T3G Datasheet
APTCV60TLM24T3G
Related parts for APTCV60TLM24T3G
APTCV60TLM24T3G Summary of contents
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... All multiple inputs and outputs must be shorted together Example: 10/11/12 ; 7/8 … All ratings @ T These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTCV60TLM24T3G Trench & Field Stop IGBT Q2, Q3 600V ; I CES CoolMOS™ Q1, Q4 600V ...
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... Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal Resistance thJC APTCV60TLM24T3G T = 25° 80° 25°C c Test Conditions Min T = 25° 0V,V = 600V ...
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... T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTCV60TLM24T3G Parameter T = 25° 80° 25° 25° 150°C J Test Conditions V = 0V, V ...
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... I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr R Junction to Case Thermal Resistance thJC APTCV60TLM24T3G Test Conditions Min 1200 T = 25° =1200V 125° 80° 15A 30A ...
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... APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ APTCV60TLM24T3G Test Conditions T = 25° =1200V 125° 80° 30A 60A 30A T = 125° 25° ...
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... Torque Mounting torque Wt Package Weight * Tjmax = 150°C for Q1 & Q4 (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Q2 & Q3 Typical performance curve APTCV60TLM24T3G To heatsink Operating Frequency vs Collector Current 75 V =300V CE D=50 =4.7Ω ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration in Seconds www.microsemi.com APTCV60TLM24T3G Output Characteristics 150 V =19V T = 150° 125 V =13V 100 GE V =15V 0 ...
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... DS R (on) vs Drain Current DS 1.3 Normalized to 1.25 V =10V @ 95A GS 1.2 1.15 1.1 1.05 1 0.95 0 120 160 200 240 280 I , Drain Current (A) D APTCV60TLM24T3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 280 V > 240 6.5V 250µs pulse test @ < 0.5 duty cycle 6V 200 160 5.5V 120 ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 1000000 100000 Coss Ciss 10000 1000 100 Drain to Source Voltage (V) DS APTCV60TLM24T3G ON resistance vs Temperature 3.0 V =10V GS 2 95A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited by R ...
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... D=50% R =2.5ΩT G 200 =125° =75°C 150 100 hard 50 switching Drain Current (A) D APTCV60TLM24T3G Rise and Fall times vs Current 70 V =400V =2.5Ω =125° L=100µ Drain Current (A) ...
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... Energy losses vs Collector Current 1 0.75 0.5 0. (A) C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTCV60TLM24T3G T =25°C J 1.6 2.0 2.4 Switching Energy Losses vs Gate Resistance 1 0.75 0 400V 15V 2.5Ω 0. 125° Single Pulse ...
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... Anode to Cathode Voltage (V) F Energy losses vs Collector Current 2.5 2 1 (A) C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.2 0.05 0 0.00001 0.0001 APTCV60TLM24T3G =25°C J 3.0 4.0 Switching Energy Losses vs Gate Resistance 1.8 1.6 1.4 1 800V 15V 5Ω 125° ...
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... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTCV60TLM24T3G 3 4 ...