APTCV60TLM24T3G Microsemi Corporation, APTCV60TLM24T3G Datasheet - Page 13

• Manufacturer Part Number: APTCV60TLM24T3G
• Description: Three Level Inverter Coolmos & Trench + Field Stop Igbt Power Module
• Manufacturer: Microsemi Corporation

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR2 & CR3 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
30
20
10
1.2
0.8
0.6
0.4
0.2
0
2.4
1.6
1.2
0.8
0.4
0.00001
1
0
0
2
0
0
Energy losses vs Collector Current
Forward Current vs Forward Voltage
V
F
, Anode to Cathode Voltage (V)
0.9
0.3
5
0.7
0.5
0.1
0.05
1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
10
J
=25°C
0.0001
T
J
I
=125°C
C
(A)
15
2
20
V
V
R
T
J
CE
GE
G
= 125°C
= 5Ω
= 800V
3
= 15V
0.001
25
Rectangular Pulse Duration (Seconds)
www.microsemi.com
30
4
Single Pulse
0.01
Switching Energy Losses vs Gate Resistance
APTCV60TLM24T3G
0.8
0.6
0.4
0.2
1
0
0
0.1
V
V
I
T
C
CE
GE
J
= 15A
= 125°C
5
= 800V
=15V
Gate resistance (ohms)
10
15
1
20
25
30
10
13 - 13