APTCV60TLM24T3G Microsemi Corporation, APTCV60TLM24T3G Datasheet - Page 12

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APTCV60TLM24T3G

Manufacturer Part Number
APTCV60TLM24T3G
Description
Three Level Inverter Coolmos & Trench + Field Stop Igbt Power Module
Manufacturer
Microsemi Corporation
Datasheet
CR7 & CR8 Typical performance curve
1.4
1.2
0.8
0.6
0.4
0.2
2.5
1.5
0.5
80
60
40
20
0.00001
0
1
0
2
1
0
0.0
0
Forward Current vs Forward Voltage
Energy losses vs Collector Current
V
0.05
0.7
0.9
0.3
0.5
0.1
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
F
, Anode to Cathode Voltage (V)
1.0
20
0.0001
I
T
C
J
2.0
=125°C
(A)
40
T
J
V
V
R
T
=25°C
CE
GE
J
G
= 125°C
3.0
= 5Ω
60
= 800V
= 15V
0.001
Rectangular Pulse Duration (Seconds)
www.microsemi.com
4.0
80
Single Pulse
0.01
1.8
1.6
1.4
1.2
0.8
0.6
APTCV60TLM24T3G
Switching Energy Losses vs Gate Resistance
1
0
V
V
I
T
C
J
CE
GE
0.1
= 30A
= 125°C
= 800V
=15V
Gate resistance (ohms)
10
1
20
10
30
12 - 13

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