MSC7116_08 Motorola Semiconductor Products, MSC7116_08 Datasheet - Page 20

• Manufacturer Part Number: MSC7116_08
• Description: Low-cost 16-bit DSP with DDR Controller and 10/100 Mbps Ethernet MAC
• Manufacturer: Motorola Semiconductor Products

Electrical Characteristics
Table 6 lists the DDR DRAM capacitance.
20
Tri-state (high impedance off state) leakage current,
V
Signal low input current, V
Signal high input current, V
Output high voltage, I
Output low voltage, I
Typical power at 266 MHz
Notes:
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
IN
= V
DDIO
1.
2.
3.
4.
5.
These values were measured under the following conditions:
• V
• f = 1 MHz
• T
• V
• V
A
DDM
OUT
OUT
= 25°C
The value of V
V
exceed ±2% of the DC value.
V
to V
Output leakage for the memory interface is measured with all outputs disabled, 0 V ≤ V
The core power values were measured.using a standard EFR pattern at typical conditions (25°C, 300 MHz, 1.2 V core).
REF
TT
= V
(peak to peak) = 0.2 V
= 2.5 V ± 0.125 V
REF
is not applied directly to the MSC7116 device. It is the level measured at the far end signal termination. It should be equal
OL
Characteristic
must be equal to 50% of V
DDM
OH
. This rail should track variations in the DC level of V
= 5 mA
= –2 mA, except open drain pins
/2
5
IL
IH
= 0.4 V
= 2.0 V
DDM
Parameter/Condition
at the MSC7116 device must remain within 50 mV of V
Table 5. DC Electrical Characteristics (continued)
DDM
Table 6. DDR DRAM Capacitance
MSC7116 Data Sheet, Rev. 13
and track V
Symbol
DDM
V
V
I
I
OZ
I
P
OH
H
OL
L
variations as measured at the receiver. Peak-to-peak noise must not
REF
.
Min
–1.0
–1.0
–1.0
2.0
—
—
DDM
at the DRAM device at all times.
Symbol
Typical
293.0
C
0.09
0.09
0.09
C
3.0
OUT
DIO
0
IO
≤ V
DDM
Freescale Semiconductor
.
Max
30
30
Max
0.4
—
—
1
1
1
Unit
pF
pF
Unit
mW
µA
µA
µA
V
V