P1200S Teccor Electronics, P1200S Datasheet - Page 165
P1200S
Manufacturer Part Number
P1200S
Description
solid state crowbar devices
Manufacturer
Teccor Electronics
Datasheet
1.P1200S.pdf
(212 pages)
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Construction and Operation
© 2002 Teccor Electronics
SIDACtor
®
Data Book and Design Guide
SIDACtor devices are thyristor devices used to protect sensitive circuits from electrical
disturbances caused by lightning-induced surges, inductive-coupled spikes, and AC power
cross conditions. The unique structure and characteristics of the thyristor are used to create
an overvoltage protection device with precise and repeatable turn-on characteristics with
low voltage overshoot and high surge current capabilities.
Key Parameters
Key parameters for SIDACtor devices are V
V
voltage) and is the continuous peak combination of AC and DC voltage that may be applied
to the SIDACtor device in its off-state condition. I
current that results from the application of V
voltage that subsequent components may be subjected to during a fast-rising (100 V/µs)
overvoltage condition. Holding current (I
device in the on state. On-state voltage (V
during full conduction.
Figure 5.1 V-I Characteristics
Operation
The SIDACtor device operates much like a switch. In the off state, the device exhibits
leakage currents (I
transient voltage exceeds the SIDACtor device’s V
protective mode with characteristics similar to an avalanche diode. When supplied with
enough current (I
the circuit it is protecting. While in the on state, the SIDACtor device is able to sink large
DRM
-V
is the repetitive peak off-state voltage rating of the device (also known as stand-off
I
DRM
I
I
I
T
S
H
S
), the SIDACtor device switches to an on state, shunting the surge from
DRM
) less than 5 µA, making it invisible to the circuit it is protecting. As a
+I
-I
V
T
V
DRM
5 - 3
V
S
H
) is the minimum current required to maintain the
T
) is the maximum voltage across the device
DRM
+V
DRM
, I
. Switching voltage (V
DRM
DRM
DRM
, V
is the maximum value of leakage
, the device begins to enter its
S
, I
H
, and V
Construction and Operation
T
, as shown in Figure 5.1.
S
) is the maximum
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