MC74HCT541ADWG ON Semiconductor, MC74HCT541ADWG Datasheet - Page 3
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MC74HCT541ADWG
Manufacturer Part Number
MC74HCT541ADWG
Description
IC BUFF/DVR TRI-ST 8BIT 20SOIC
Manufacturer
ON Semiconductor
Series
74HCTr
Specifications of MC74HCT541ADWG
Logic Type
Buffer/Line Driver, Non-Inverting
Number Of Elements
1
Number Of Bits Per Element
8
Current - Output High, Low
6mA, 6mA
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Logic Family
74HCT
Number Of Channels Per Chip
Octal
Polarity
Non-Inverting
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Temperature
125 C
Mounting Style
SMD/SMT
High Level Output Current
- 6 mA
Input Bias Current (max)
4 uA
Low Level Output Current
6 mA
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 55 C
Number Of Lines (input / Output)
3
Output Type
3-State
Propagation Delay Time
23 ns @ 5 V
Circuit Type
Silicon Gate
Current, Supply
160 μA
Function Type
8-Channels
Logic Function
Buffer/Driver/Receiver
Number Of Circuits
Octal
Package Type
SOIC-20
Special Features
Non-Inverting, Tri-State
Temperature, Operating, Range
-55 to +125 °C
Voltage, Supply
4.5 to 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC74HCT541ADWG
MC74HCT541ADWGOS
MC74HCT541ADWGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC74HCT541ADWG
Manufacturer:
Freescale
Quantity:
540
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
2. Total Supply Current = I
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
* Used to determine the no−load dynamic power consumption: P
DC CHARACTERISTICS
Symbol
AC CHARACTERISTICS
Symbol
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
DI
t
t
t
t
V
t
t
t
t
C
C
V
V
PLH
PLZ
PZL
TLH
V
I
I
PHZ
PZH
C
PHL
THL
I
CC
OZ
OH
OL
in
out
PD
IH
CC
IL
in
,
,
,
,
Semiconductor High−Speed CMOS Data Book (DL129/D).
Minimum High−Level Input Voltage
Maximum Low−Level Input Voltage
Minimum High−Level Output Voltage
Maximum Low−Level Output Voltage
Maximum Input Leakage Current
Maximum 3−State Leakage Current
Maximum Quiescent Supply Current
(per Package)
Additional Quiescent Supply Current
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
Maximum Input Capacitance
Maximum 3−State Output Capacitance (Output in High Impedance State)
Power Dissipation Capacitance (Per Buffer)*
Parameter
CC
(Voltages Referenced to GND)
(V
+ ΣDI
CC
CC
= 5.0V, C
.
L
= 50 pF, Input t
Parameter
V
|I
V
|I
V
|I
V
V
|I
V
V
Output in High Impedance State
V
V
V
I
V
V
I
out
out
out
out
out
out
out
out
in
in
in
in
in
in
out
in
in
in
= V
= V
= V
= V
= V
= V
= V
= 2.4V, Any One Input
= V
| ≤ 20mA
| ≤ 20mA
| ≤ 20mA
| ≤ 20mA
= 0mA
= 0mA
= 0.1V or V
= 0.1V or V
= V
MC74HCT541A
IH
IH
IH
IH
CC
IL
CC
CC
CC
or V
r
or V
or V
or V
or V
or GND
or GND
or GND, Other Inputs
= t
or GND
Condition
f
D
IH
IL
IL
IL
IL
= 6 ns)
= C
3
CC
CC
PD
− 0.1V
− 0.1V
|I
|I
out
out
V
CC
| ≤ 6.0mA
| ≤ 6.0mA
2
f + I
CC
V
CC
V
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
5.5
5.5
. For load considerations, see Chapter 2 of the
V
CC
−55 to 25°C
−55 to 25°C
Typical @ 25°C, V
≥ −55°C
23
30
30
12
10
15
3.98
0.26
±0.1
±0.5
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
2.9
4
Guaranteed Limit
Guaranteed Limit
55
≤85°C
≤85°C
28
34
34
15
10
15
3.84
0.33
±1.0
±5.0
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
40
25 to 125°C
CC
2.4
= 5.0 V
≤125°C
≤125°C
±10.0
3.70
0.40
±1.0
160
32
38
38
18
10
15
2.0
2.0
0.8
0.8
4.4
5.4
0.1
0.1
Unit
Unit
mA
mA
mA
mA
ns
ns
ns
ns
pF
pF
pF
V
V
V
V